general purpose transistors maximum ratings symbol l 2sa812 unit collector-emitter voltage v ceo -50 v collector-base voltage v cbo -60 v emitter-base voltage v ebo -6 v collector current-continuoun i c -150 madc thermal charateeristics symbol max unit total device dissipation fr-5 board, (1) p d 200 mw 1.8 mw/ o c thermal resistance, junction to ambient r ja 556 o c / w p d 200 mw 2.4 mw/ o c thermal resistance, junction to ambient r ja 417 o c / w junction and storage temperature tj ,tstg -55 to +150 o c total device dissipation derate above 25 o c rating t a =25 o c derate above 25 o c alumina substrate, (2) t a =25 o c characteristic sot-23 2 emitter 3 collector 1 base feature ?high voltage: v ceo = -50 v. ?epitaxial planar type. ?npn complement: 2sc1623 ? device marking and ordering information device marking 2sa812qlt1 m8 2sa812rlt1 m6 2sa812slt1 m7 3000/tape&reel shipping 3000/tape&reel 3000/tape&reel we declare that the material of product compliance with rohs requirements. 2012- willas electronic corp. 2SA812XLT1
characteristic symbol min typ max unit on characteristics dc current gain h fe 120 - 560 (i c = - 1ma,v ce = - 6.0v) collector-emitter saturation voltage (i c = - 100ma,i b = - 10ma) v ce(sat) - -0.18 -0.3 v base -emitter on voltage i e = - 1.0ma,v ce = - 6.0v) v be -0.58 -0.62 -0.68 v small-signal characteristics current-gain-bandwidth product f t - 180 - mhz (v ce = - 6.0v,i e = - 10ma) output capacitance(v ce = - 10v, i e =0, f=1.0mhz) c obo - 4.5 - pf h fe values are classified as followes note: * q r s h fe 120~270 180~390 270~560 electrical characteristics (t a =25 o c unless otherwise noted) off characteristics collector-emitter breakdown voltage v (br)ceo -50 - - v (i c =-1ma) emitter-base breakdown voltage v (br)ebo -6 - - v (i e =-50 ? ) collector-base breakdown voltage v (br)cbo -60 - - v (i c =-50 a) collector cutoff current (v cb =-50v) i cbo - - -0.1 a emitter cutoff current (v be =-6v) i ebo -0.1 a 2012- willas electronic corp. general purpose transistors 2sa812xl
?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 ?1.4 ?1.6 t a = 100c 25c ? 40c ?50 ?20 ?10 ?50 ?2 ?1 ?0.5 ?0.2 ?0.1 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 t a = 25c ?10 ?8 ?6 ?4 ?2 0 i c , collector current (ma) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics( ) fig.3 grounded emitter output characteristics( ) fig.4 dc current gain vs. collector current ( ) fig.5 dc current gain vs. collector current ( ) fig.6 collector-emitter saturation voltage vs. collector current ( ) v ce = ?10 v v be , base to emitter voltage(v) i c , collector current (ma) v ce , collector to emitter voltage (v) ?35.0 ?31.5 ?28.0 ?24.5 ?21.0 ?17.5 ?14.0 ?10.5 ?7.0 ?3.5 a i b =0 0 ? 1? 2 ? 3 ? 4? 5 t a = 25c ?100 ?80 ?60 ?40 ?20 0 i c , collector current (ma) v ce , collector to emitter voltage (v) ?250 ?200 ?150 500 450 400 350 300 ?100 ?50 a i b =0 t a = 25c 500 200 100 50 h fe , dc current gain v ce = ?5 v ?3v ?1v i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 t a = 100c 500 200 100 50 h fe , dc current gain v ce = ? 6v i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 25c ?40c ?1 ?0.5 ?0.2 ?0.1 ?0.05 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 t a = 25c i c /i b = 50 20 10 2012- willas electronic corp. general purpose transistors 2sa812xl
fig.7 collector-emitter saturation voltage vs. collector current ( ) ?1 ?0.5 ?0.2 ?0.1 ?0.05 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 t a = 100c 25c ?40c i c /i b = 10 fig.8 gain bandwidth product vs. emitter current 1000 500 200 100 50 f r , transition frequency(mhz) i e , emitter current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 t a = 25c v ce = ?12v fig.9 collector output capacitance vs.collector-base voltage emitter inputcapacitance vs. emitter-base voltage 20 10 5 2 c ob , collector output capacitance( pf) c ib , emitter input capacitance (pf) v cb , collector to base voltage (v) v eb , emitter to base voltage (v) ?0.5 ?1 ?2 ?5 ?10 ?20 t a = 25c f =1mhz i e = 0a i c = 0a c ib c ob 2012- willas electronic corp. general purpose transistors 2sa812xl
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- willas electronic corp. general purpose transistors 2sa812xl dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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